首页> 外文OA文献 >Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

【2h】

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

机译：碳纳米管金属氧化物半导体中的带间隧穿场效应晶体管由声子辅助隧穿主导

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

Band-to-band tunneling (BTBT) devices have recently gained a lot of interestdue to their potential for reducing power dissipation in integrated circuits.We have performed extensive simulations for the BTBT operation of carbonnanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) usingthe non-equilibrium Green's functions formalism for both ballistic anddissipative quantum transport. In comparison with recently reportedexperimental data (Y. Lu et al, J. Am. Chem. Soc., v. 128, p. 3518-3519, 2006),we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated byoptical phonon assisted inelastic transport, which can have importantimplications on the transistor characteristics. It is shown that under largebiasing conditions two-phonon scattering may also become important.

机译：近年来，由于带间隧穿（BTBT）器件具有降低集成电路功耗的潜力，因此引起了人们的极大兴趣。我们对碳纳米管金属氧化物半导体场效应晶体管（CNT）的BTBT操作进行了广泛的仿真-MOSFET）使用非平衡格林函数形式表示的弹道和耗散量子传输。与最近报道的实验数据相比（Y. Lu等人，J。Am。Chem。Soc。，第128页，第3518-3519页，2006年），我们获得了有力的证据，表明CNT-MOSFET中的BTBT以光子为主辅助的非弹性传输，这可能对晶体管的特性产生重要影响。结果表明，在大偏置条件下，两个声子的散射也可能变得很重要。

著录项

作者
Koswatta, Siyuranga O.; Lundstrom, Mark S.; Nikonov, Dmitri E.;
展开▼
作者单位

展开▼
年度 2007
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling [J] . Koswatta SO, Lundstrom MS, Nikonov DE Nano letters . 2007,第5期

机译：碳纳米管金属氧化物半导体场效应晶体管中的带间隧穿由声子辅助隧穿控制
2. Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors [J] . Siyuranga O. Koswatta, Mark S.Lundstrom, M. P. Anantram, Applied Physics Letters . 2005,第25期

机译：碳纳米管场效应晶体管中声子辅助的带间隧穿的仿真
3. Investigation of the performance and band-to-band tunneling effect of a newdouble-halo-doping carbon nanotube field-effect transistor [J] . Zahra Arefinia Physica, E. Low-dimensional systems & nanostructures . 2009,第10期

机译：新型双卤掺杂碳纳米管场效应晶体管的性能和带间隧穿效应的研究
4. Dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling [C] . Chun-Hsing Shih, Ting-Shiuan Kang, Yu-Hsuan Chen, Silicon Nanoelectronics Workshop . 2017

机译：具有肖特基势垒和带间隧穿的掺杂剂隔离金属源隧道场效应晶体管
5. Band-to-Band Tunnel Transistor Design and Modeling for Low Power Applications. [D] . Jeon, Kanghoon. 2012

机译：低功耗应用的带间隧道晶体管设计和建模。
6. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor [O] . Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, -1

机译：基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
7. Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors [O] . Koswatta, Siyu, Lundstrom, Mark S., Anantram, M. P., 2005

机译：碳纳米管中声子辅助带间隧穿的模拟场效应晶体管

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

摘要

著录项

相似文献

相关主题

期刊订阅